IRFP460LC DATASHEET PDF

IRFPLC Vishay / Siliconix MOSFET N-Chan V 20 Amp datasheet, inventory, & pricing. IRFPLC, SiHFPLC IRFPLC, SiHFPLC . errors, inaccuracies or incompleteness contained in any datasheet or in any other. IRFPLC V Single N-channel HexFET Power MOSFET in a TOAC Package. Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced V .

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Temperature C Vishay Siliconix www.

These device improvements combined with the proven ruggedness and reliabiltity datasheft Power MOSFETs offer the designer a new standard in power transistors for switching applications. Download datasheet 2Mb Share this page.

IRFPLC Vishay, IRFPLC Datasheet

Repetitive rating; pulse width limited by maximum junction temperature see fig. Elcodis is datashset trademark of Elcodis Company Ltd. Vishay Intertechnology Electronic Components Datasheet.

The TO package is preferred for commercial-industrial.

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IRFP460LC MOSFET. Datasheet pdf. Equivalent

Vishay product could result in personal injury or death. TO package because its isolated mounting hole. The TO package is preferred for commercial-industrial.

Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part The TO is similar but superior to the.

Single Pulse Avalanche Energy b.

Repetitive Avalanche Current a. The TO is similar but superior to the. Operating Junction and Storage Temperature Range. Copy your embed code and put on your site: Repetitive rating; pulse width limited by maximum junction temperature see fig.

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Repetitive Avalanche Energy a. Pulsed Drain Current a.

All other trademarks are the property of their respective owners. These device improvements combined with the proven. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.

IRFP460LC Datasheet PDF

Current sampling resistors Fig. These device improvements combined with the proven.

The TO package is preferred for commercial-industrial applications where higher power levels preclude the use of TO devices. Drain Current Charge Fig. Soldering Recommendations Peak Temperature. Vary t to obtain p required I AS D. The TO is similar but superior to the earlier TO package because its isolated mounting hole.